jiangsu changjiang electronics technology co., ltd s ot - 5 23 plastic - encapsulate transistors 2 s c4 738 transistor ( npn ) features ? high voltage a nd current ? high dc c urrent g ain ? c omplementary t o 2s a1832 ? small package applications ? general purpose amplification m aximum r atings (t a =25 unless otherwise noted ) electrical characteristics ( t a =25 unless otherwise specified) p arameter symbol test conditions m in t yp m ax u nit collector - base breakdown voltage v (br) cbo i c = 100 a , i e =0 60 v collector - emitter breakdown voltage v (br) c e o i c = 1 ma, i b =0 50 v emitter - base breakdown voltage v (br)eb o i e = 100 a , i c =0 5 v collector cut - off current i cbo v cb = 60 v, i e =0 1 00 n a emitter cut - off current i ebo v eb = 5 v, i c =0 1 00 n a dc current gain h fe v ce = 6 v, i c = 2 m a 120 700 collector - emitter saturation voltage v ce(sat) i c = 1 0 0 m a, i b = 1 0 ma 0.25 v transition frequency f t v ce = 10 v,i c = 1 ma 80 mhz collector output capacitance c ob v cb = 10 v, i e =0, f=1mhz 3.5 pf classification of h fe rank y gr bl range 120 C 240 200 C 400 350 C 700 marking ly lg ll symbol parameter value unit v cbo collector - base voltage 60 v v ceo collector - emitter voltage 50 v v ebo emitter - base voltage 5 v i c collector current 150 m a p c collector power dissipation 100 m w r ja thermal resistance from j u nction to a mbient 1250 /w t j junction temperature 150 t stg storage temperature - 55 + 150 so t C 5 23 1. base 2. emitter 3. collector www.cj-elec.com 1 a,jun,2014 www.cj-elec.com c,mar,2016
0.1 1 10 100 10 100 1000 0.1 1 10 100 10 100 0.1 1 10 1 0 25 50 75 100 125 150 0 25 50 75 100 125 0.2 0.4 0.6 0.8 1.0 0.1 1 10 100 0.1 1 10 100 0.0 0.4 0.8 1.2 024681012 0 2 4 6 8 300 30 150 h fe ?? common emitter v ce =6v 0.3 3 30 t a =100 t a =25 dc current gain h fe collector current i c (ma) i c 150 =10 30 3 0.3 collector-emitter saturation voltage v cesat (mv) collector current i c (ma) t a =25 t a =100 i c v cesat ?? 300 30 20 10 3 3 0.3 20 c ob c ib reverse voltage v (v) f=1mhz i e =0/i c =0 t a =25 v cb / v eb c ob / c ib ?? capacitance c (pf) t a -can collector power dissipation p c (mw) ambient temperature t a ( ) p c ?? 30 v be i c ?? 3 0.3 150 t a =25 t a =100 common emitter v ce =6v collector current i c (ma) base-emmiter voltage v be (v) 150 3 0.3 =10 base-emitter saturation voltage v besat (v) collector current i c (ma) t a =25 t a =100 30 i c v besat ?? static characteristic collector current i c (ma) collector-emitter voltage v ce (v) 20ua 18ua 14ua 16ua 12ua 10ua 8ua 6ua 4ua i b =2ua common emitter t a =25 typical characteristics www.cj-elec.com 2 a,jun,2014 www.cj-elec.com c,mar,2016 a,oct,2010
mi n . max. min. max. a 0.700 0.900 0.028 0.035 a1 0.000 0.100 0.000 0.004 a2 0.700 0.800 0.028 0.031 b1 0.150 0.250 0.006 0.010 b2 0.250 0.350 0.010 0.014 c 0.100 0.200 0.004 0.008 d 1.500 1.700 0.059 0.067 e 0.700 0.900 0.028 0.035 e1 1.450 1.750 0.057 0.069 e e1 0.900 1.100 0.035 0.043 l l1 0.260 0.460 0.010 0.018 0 8 0 8 0.400 ref. 0.016 ref. symbol dimensions in millimeters dimensions in inches 0.500 typ. 0.020 typ. 6 2 7 3 d f n d j h 2 x w o l q h ' l p h q v l r q v 6 2 7 6 x j j h v w h g 3 d g / d \ r x w www.cj-elec.com 3 a,jun,2014 www.cj-elec.com c,mar,2016
6 2 7 7 d s h d q g 5 h h o www.cj-elec.com 4 a,jun,2014 www.cj-elec.com c,mar,2016
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